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Silicon Carbide Wafers

Product Description: 

Due to Silicon Carbide (SiC) physical and electronic properties, SiC based devices are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices, compared with Si and GaAs based devices.

SiC Epitaxy

We provide custom thin film SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, insulated gate bipolar as well as other applications.

SiC conductive substrates and SiC semi-insulating substrates

We offer 6H and 4H N type conductive SiC substrates and 6H and 4H semi-insulating SiC substrates in different quality grades. Micro-pipe density of less than 2 per cm2 is available upon request.

SILICON CARBIDE MATERIAL PROPERTIES: 

Materials Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å , c=10.053 Å a=3.073 Å, c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4~5×10-6/K 4~5×10-6/K
Refraction Index no = 2.719, ne = 2.777 no = 2.707, ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/m·K 490 W/m·K
Break-Down Electrical Field 2 ~ 4 · 108 V/m 2 ~ 4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~ 9 ~ 9

 

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