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Silicon on Sapphire

Product Description: 

Silicon on Sapphire (SOS) is a type of silicon on insulator (SOI) which is one of the available technologies to fabricate integrated circuits. In SOS, a thin layer of silicon is grown on top of a sapphire substrate. SOI-based devices differ from conventional silicon-built devices by reducing parasitic device capacitance, thereby improving performance.

Specification: 

Material Mono-crystalline Sapphire, high purity (>99.996%)
Thickness 100.0±0.2mm (4 inches) 150.0±0.3mm (6 inches)
Orientation  R-plane (1-102) Tilt 0°±0.1
Thickness 460 / 500 / 530 ± 25um 600 ± 25um
Primary Flat Length 32.5±2.5mm
47.5±2.5mm
Primary Flat Orientation 45°±2° from the projection of the C-axis in the R-plane
TTV ≤15µm ≤20µm
WARP ≤30µm ≤40µm
BOW ≤20µm ≤30µm
Flatness ≤12µm ≤15µm
Front Surface Epi-Polished (Ra< 0.3nm)
Back Surface Fine ground (0.4~1.4μm) or Fine-polished Ra<1.0nm
Edge Exclusion 2~3mm
2~3mm
EPI Layer
Thickness 0.1~3.0μm Silicon Epitaxy Layer
Surface Quality In accordance with SEMI M4-1296
Resistivity 0.1 ~ 100 ohm·cm or >100 ohm·cm
Particulate Density Particles greater than 2 microns less than 2pcs/cm2

 

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 230nm, Resistivity: >100 ohm·cm, double side polished, PSOS-1330511 ($960.0): 

 
 

 
R -plane sapphire thickness: 0.525mm. contact us for quantity pricing.

 

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 600nm, Resistivity: >100 ohm·cm, one side polished, PSOS-1310311 ($950.0): 

 
 

 
R -plane sapphire thickness: 0.46mm. contact us for quantity pricing.

 

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 650nm, Resistivity: >100 ohm·cm, double side polished, PSOS-1340712 ($1020.0): 

 
 

 
R -plane sapphire thickness: 0.53mm. contact us for quantity pricing.

 

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 850nm, Resistivity: >100 ohm·cm, double side polished, PSOS-1340812 ($1060.0): 

 
 

 
R -plane sapphire thickness: 0.53mm. contact us for quantity pricing.

 

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 1500nm, Resistivity: >100 ohm·cm, one side polished, PSOS-1310411 ($1050.0): 

 
 

 
R -plane sapphire thickness: 0.46mm. contact us for quantity pricing.

 

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 1500nm, Resistivity: >100 ohm·cm, double side polished, PSOS-1340412 ($1160.0): 

 
 

 
R -plane sapphire thickness: 0.53mm. contact us for quantity pricing.

 

4 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 3000nm, Resistivity: >100 ohm·cm, double side polished, PSOS-1330612 ($1250.0): 

 
 

 
R -plane sapphire thickness: 0.53mm. contact us for quantity pricing.

 

6 Inch silicon on R-plane sapphire wafers in stock, Epi layer thickness: 500nm, Resistivity: >100 ohm·cm, one side polished, PSOS-1420211 ($1300.0): 

 
 

 
R -plane sapphire thickness: 0.60mm. contact us for quantity pricing.

 

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