Optical Materials
Micro-Optical Components
Fiber Optic Components
Light Sources & Photodiodes
Wafers
  Sapphire Wafer
  Patterned Sapphire Wafer
  ZnO Wafers Substrate
  Gallium Arsenide Wafer
  Gallium Nitride Wafer
  Silicon Carbide Wafer
  Lithium Niobate Wafer
  Black Lithium Niobate Wafer
  MgO:Lithium Niobate Wafer
  Lithium Tantalate Wafer
  Black Lithium Tantalate Wafer
  Langasite Wafer
  Optical Grade Silicon Wafer
  Optical Grade Ge Wafer
  Optical substrates
  Silicon on Sapphire(SOS)
  Silicon on Insulator (SOI)
  GaN on Sapphire Substrate
  Quartz Wafer
Services
       

Silicon Carbide Conductive Wafers

Product Description: 

Due to Silicon Carbide (SiC) physical and electronic properties, SiC based devices are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices, compared with Si and GaAs based devices.

SiC Epitaxy, SiC conductive substrates, SiC semi-insulating substrates

Features: 

  • Both 4H and 6H types are available
  • Wafer size up to 4 inches
  • Micropipe Density less than 2cm-2 is available upon request

SILICON CARBIDE MATERIAL PROPERTIES: 

Materials Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å , c=10.053 Å a=3.073 Å, c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4~5×10-6/K 4~5×10-6/K
Refraction Index no = 2.719, ne = 2.777 no = 2.707, ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/m·K 490 W/m·K
Break-Down Electrical Field 2 ~ 4 · 108 V/m 2 ~ 4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~ 9 ~ 9

 

6H N-TYPE SIC, 2″WAFER SPECIFICATION: 

Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm, (330 ± 25) μm, (430 ± 25) μm
Carrier Type n-type
Resistivity (RT) 0.02 ~ 0.2 Ω·cm
Surface Roughness < 0.5 nm single side polished
FWHM <50 arcsec
Micropipe Density 100 cm-2
Surface Orientation  <0001>± 0.5°
Primary flat orientation   10-10 ± 5°
Primary flat length (16.0 ± 1.7) mm
Primary flat length Si-face:90° cw. from orientation flat ± 5°;  C-face:90° ccw. from orientation flat ± 5°
Surface Finish Single side polished
Packaging Single wafer box or multi wafer box
Usable area 70 %
TTV ≤ 15um

 

6H N-TYPE SIC, 2″ Silicon Carbide WAFER in stock, 330um thickness, PWSC-11B22511 ($225.0): 

 
 

 
Contact us for quantity pricing. Customized wafers are welcome

 

6H N-TYPE SIC, 10X10mm Silicon Carbide WAFER in stock, 340um thickness, PWSC-1AB03221 ($136.0): 

 
 

 
MPD < 5 cm-2, FWHM < 20 arc sec Contact us for quantity pricing. Customized wafers are welcome

 

4H N-TYPE SIC, 2″WAFER SPECIFICATION: 

Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm, (330 ± 25) μm, (430 ± 25) μm
Carrier Type n-type
Resistivity (RT) < 0.1 Ω·cm
Surface Roughness < 0.5 nm (Si-face ); <1 nm (C- face)
FWHM <25 arcsec
Micropipe Density ≤ 15 cm-2
Surface Orientation  <0001> off 4°± 0.5°
Primary flat orientation M-plane (1010) ± 5°
Primary flat length (15.9 ± 1.7) mm
Secondary Flat Orientation 90° cw. from orientation flat ± 5°; 
Secondary flat length (8.0 ± 1.7) mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion 1 mm

 

4H N-TYPE SIC, 2″ Silicon Carbide WAFER in stock, 330um thickness, PWSC-21B23212 ($586.0): 

 
 

 
Contact us for quantity pricing. Customized wafers are welcome

 

4H N-TYPE SIC, 2″ Silicon Carbide WAFER in stock, 1000um thickness, PWSC-21523212 ($1520.0): 

 
 

 
Contact us for quantity pricing. Customized wafers are welcome

 

4H N-TYPE SIC, 3″WAFER SPECIFICATION: 

Diameter (76.2 ± 0.38) mm
Thickness (350 ± 25) μm     (430 ± 25) μm
Carrier Type n-type
Dopant Nitrogen
Resistivity (RT) 0.012 - 0.0028 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM <50 arcsec
Micropipe Density ≤ 50 cm-2
TTV/Bow /Warp <25μm
Surface Orientation On axis <0001>± 0.5°
Surface Orientation Off axis 4°or 8° toward <11-20>± 0.5°
Primary flat orientation <11-20>±5.0°
Primary flat length 22.2 mm±3.2mm
Primary flat length Si-face:90° cw. from orientation flat ± 5°;  C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 11 ± 1.7 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion 2 mm

 

Copyright © 2014 Precision Micro-Optics LLC. All Rights Reserved.