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Aluminum Nitride (AIN) Substrate

Product Description: 

The aluminum nitride (AlN) ceramic has high thermal conductivity, low dielectric constant excellent mechanical properties, non-toxic, high thermal and chemical resistance. The linear expansion coefficient is similar with silicon.

Specification: 

  Material Aluminum Nitride Substrate
  Surface Roughness (μm) Ra = 0.02~0.05
  Breakdown Strength (KV/mm) 18.45
  Wrap (Length ‰) ≤ 2
  Volume Resistivity (Ω·cm) 1.4 X 1014
  Density (g/cm^3) 3.34
  Front Surface Finish Polished
  Back Surface Finish Lapped
  Thermal conductivity (W/m.K) ≥ 180
  Thermal expansion (x 10-6/°C) 2.90
  Dielectric Constant (@1MHz) 8.7
  Flexural Strength
450
  Loss Tangent (X10-4 @ 1MHz)
5

 

60X48X2mm, Aluminum Nitride substrates in stock, one side polished, PWAN-1B011 ($65.0): 

 
 

 
contact us for quantity pricing.

 

 

 

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