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  Optical substrate
  Silicon on Sapphire(SOS)
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  GaN on Sapphire Substrate
  Quartz Wafer
Services
       

Gallium Nitride on Sapphire Substrate

2 Inch Si-doped N-Type GaN Epitaxial template on sapphire: 

Orientation 0001
Film Thickness >5µm ± 0.25µm
Diameter 50.8 ± 0.1mm
Edge Exclusion <1mm
Useable Surface Area > 90%
Conduction Type N-Type
Resistivity 0.01 - 0.1 Ohm-cm
Carrier Concentration 5E18 /cm^3
Macro Defect ≤ 10 / cm-2
Dislocation Density < 5E8 / cm2
FWHM of RC for the symmetric (002) reflection ~ 250 arcsec
FWHM of RC for the symmetric (102) reflection ~ 300 arcsec
Surface Finish / Polish RMS <0.5nm by AFM 10µmX10µm scan
As -Grown Ga Face
Substrate Sapphire
(0001) miscut 0.2 deg ± 0.1 deg toward M plane
Thickness of Sapphire 430µm ± 25µm
TTV ≤ 10µm
BOW ≤ 10µm
Warp ≤ 10µm
Polish One side polished (1sp)

 

2 Inch Si-doped GaN Epitxial template on sapphire in stock, single side polished, PWGS-111132111($365.0): 

 
 

 
contact us for quantity pricing.

 

2 Inch Si-doped GaN Epitxial template on sapphire in stock, double side polished, PWGS-111132211($385.0): 

 
 

 
contact us for quantity pricing.

2 Inch Mg-doped P-Type GaN Epitaxial template on sapphire: 

Orientation 0001±0.5°
Film Thickness 5µm
Diameter 50.8 ± 0.2mm
Edge Exclusion <1mm
Useable Surface Area > 90%
Conduction Type P-Type
Resistivity   < 0.5 Ohm-cm
Dopant Mg
Dislocation Density < 1E8 / cm2
As -Grown Ga Face
Substrate Sapphire
(0001) miscut 0.2 deg ± 0.1 deg toward M plane
Thickness of Sapphire 430µm ± 25µm
TTV ≤ 15µm
BOW ≤ 15µm
Warp ≤ 15µm
Polish Double / Single side polished 

 

2 Inch Mg-doped GaN Epitxial template on sapphire in stock, single side polished, PWGS-11123A111($266.0): 

 
 

 
contact us for quantity pricing.

 

2 Inch Mg-doped GaN Epitxial template on sapphire in stock, double side polished, PWGS-11123A211($268.0): 

 
 

 
contact us for quantity pricing.

Doped GaN Epitxial on Sapphire for Blue/Green/UV-LED: 

Epi-Layer Doped GaN Epitxial on Sapphire for Blue/Green/UV-LED
Orientation 0001±0.5°
Film Thickness 4~6µm
Diameter 50.8 ± 0.2mm for 2 inch, 100.2 ± 0.2mm for 4 inch
Edge Exclusion < 1.5mm
Useable Surface Area > 90%
Structure p-InGaN/p-GaN/GaN MQW/GaN SL/n-GaN/u-GaN/GaN Buffer/Sapphire
Substrate Sapphire
(0001) miscut 0.2 deg ± 0.1 deg toward M plane
Thickness of Sapphire 430µm ± 25µm for 2 inch, 650 ± 25μm for 4 inch
TTV ≤ 15µm
BOW ≤ 15µm
Warp ≤ 15µm
Polish Single side polished 

 

2 inch GaN based green Epi-wafer, 4.0um thick GaN Epi-layer on C-plane sapphire substrate in stock, Single side polished, PWGS-11233A111($160.0): 

 
 

 
contact us for quantity pricing.

 

2 inch GaN based green Epi-wafer, 4.0um thick GaN Epi-layer on C-plane sapphire substrate in stock, double side polished, PWGS-11233A211($186.0): 

 
 

 
contact us for quantity pricing.

 

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