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2 Inch Si-doped N-Type GaN Epitaxial template on sapphire:
| Orientation |
0001
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| Film Thickness |
>5µm ± 0.25µm
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| Diameter |
50.8 ± 0.1mm
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| Edge Exclusion |
<1mm
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| Useable Surface Area |
> 90%
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| Conduction Type |
N-Type
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| Resistivity |
0.01 - 0.1 Ohm-cm
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| Carrier Concentration |
5E18 /cm^3
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| Macro Defect |
≤ 10 / cm-2
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| Dislocation Density |
< 5E8 / cm2
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| FWHM of RC for the symmetric (002) reflection |
~ 250 arcsec
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| FWHM of RC for the symmetric (102) reflection |
~ 300 arcsec
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| Surface Finish / Polish |
RMS <0.5nm by AFM 10µmX10µm scan
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| As -Grown |
Ga Face
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| Substrate |
Sapphire
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| (0001) miscut |
0.2 deg ± 0.1 deg toward M plane
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| Thickness of Sapphire |
430µm ± 25µm
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| TTV |
≤ 10µm
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| BOW |
≤ 10µm
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| Warp |
≤ 10µm
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| Polish |
One side polished (1sp)
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2 Inch Si-doped GaN Epitxial template on sapphire in stock, single side polished, PWGS-111132111($365.0):
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| contact us for quantity pricing. |
2 Inch Si-doped GaN Epitxial template on sapphire in stock, double side polished, PWGS-111132211($385.0):
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| contact us for quantity pricing. |
2 Inch Mg-doped P-Type GaN Epitaxial template on sapphire:
| Orientation |
0001±0.5°
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| Film Thickness |
5µm |
| Diameter |
50.8 ± 0.2mm
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| Edge Exclusion |
<1mm
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| Useable Surface Area |
> 90%
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| Conduction Type |
P-Type
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| Resistivity |
< 0.5 Ohm-cm
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| Dopant |
Mg
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| Dislocation Density |
< 1E8 / cm2
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| As -Grown |
Ga Face
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| Substrate |
Sapphire
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| (0001) miscut |
0.2 deg ± 0.1 deg toward M plane
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| Thickness of Sapphire |
430µm ± 25µm
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| TTV |
≤ 15µm
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| BOW |
≤ 15µm
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| Warp |
≤ 15µm
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| Polish |
Double / Single side polished
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2 Inch Mg-doped GaN Epitxial template on sapphire in stock, single side polished, PWGS-11123A111($266.0):
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| contact us for quantity pricing. |
2 Inch Mg-doped GaN Epitxial template on sapphire in stock, double side polished, PWGS-11123A211($268.0):
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| contact us for quantity pricing. |
Doped GaN Epitxial on Sapphire for Blue/Green/UV-LED:
| Epi-Layer |
Doped GaN Epitxial on Sapphire for Blue/Green/UV-LED
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| Orientation |
0001±0.5°
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| Film Thickness |
4~6µm |
| Diameter |
50.8 ± 0.2mm for 2 inch, 100.2 ± 0.2mm for 4 inch
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| Edge Exclusion |
< 1.5mm
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| Useable Surface Area |
> 90%
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| Structure |
p-InGaN/p-GaN/GaN MQW/GaN SL/n-GaN/u-GaN/GaN Buffer/Sapphire
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| Substrate |
Sapphire
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| (0001) miscut |
0.2 deg ± 0.1 deg toward M plane
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| Thickness of Sapphire |
430µm ± 25µm for 2 inch, 650 ± 25μm for 4 inch
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| TTV |
≤ 15µm
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| BOW |
≤ 15µm
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| Warp |
≤ 15µm
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| Polish |
Single side polished
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2 inch GaN based green Epi-wafer, 4.0um thick GaN Epi-layer on C-plane sapphire substrate in stock, Single side polished, PWGS-11233A111($160.0):
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| contact us for quantity pricing. |
2 inch GaN based green Epi-wafer, 4.0um thick GaN Epi-layer on C-plane sapphire substrate in stock, double side polished, PWGS-11233A211($186.0):
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| contact us for quantity pricing. |
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