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Silicon Carbide Semi-insulating Wafers

Product Description: 

Due to Silicon Carbide (SiC) physical and electronic properties, SiC based devices are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices, compared with Si and GaAs based devices.

SiC Epitaxy, SiC conductive substrates, SiC semi-insulating substrates: 

Features: 

  • Both 4H and 6H types are available
  • Wafer size up to 4 inches
  • Micropipe Density less than 2cm-2 is available upon request

6H SEMI-INSULATING SIC, 2″WAFER SPECIFICATION:  

Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm, (330 ± 25) μm, (430 ± 25) μm
Resistivity (RT) >1E5 Ω·cm
Surface Roughness < 0.5 nm
FWHM <50 arcsec
Micropipe Density ≤ 10 cm-2
Surface Orientation <0001>± 0.5°
Primary flat orientation {1010} ± 0.5°
Primary flat length (16 ± 1.7) mm
Secondary Flat Orientation 90° cw. from orientation flat ± 0.5°; 
Secondary flat length (8 ± 1.7) mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion   2.0 mm

 

2 Inch 6H SEMI-INSULATING SiC wafer in stock, thickness: 0.33mm, one side polished, one side etched PWSC-31B23211($1510.0): 

 
 

 
Contact us for quantity pricing.

 

4H SEMI-INSULATING SIC, 4″WAFER SPECIFICATION:  

Diameter (100 ± 0.5) mm
Thickness (350 ± 25) μm,
Resistivity (RT) >1E7 Ω·cm
Surface Roughness < 0.5 nm
Micropipe Density ≤ 50 cm-2
Surface Orientation <0001>± 0.5°
Primary flat orientation {1120} ± 0.5°
Primary flat length (32.5 ± 2.0) mm
Secondary Flat Orientation 90° cw. from orientation flat ± 0.5°; 
Secondary flat length (18 ± 2.0) mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Edge exclusion   2.0 mm

 

4 Inch 4H SEMI-INSULATING SiC wafer in stock, thickness: 0.5mm, double side polished, PWSC-43K32521($2100.0): 

 
 

 
Contact us for quantity pricing.

 

4H SI-TYPE SIC, 6 inch high purity single crystal silicon carbide wafer, SPECIFICATION: 

Material High Purity Single Crystal Silicon Carbide
Single-Crystal 4H
Orientation <0001> On-axis +/-0.5 deg
Primary Flat Semi Notch @ <10-10> +/-5 deg
Diameter 150.0 +/- 0.2mm
Thickness 500 +/- 25 um
TTV ≤ 10μm
WARP ≤ 40μm
Si-face Surface & Roughness CMP Epi-ready polish,Ra<0.5nm
C-face Surface & Roughness Optical polish, Ra<1.0nm
Dopant High Purity Un-Doped
Conduction Type Semi insulating-type
Resistivity >1E8 Ohm.cm
Micropipe Density ≤ 1 cm-2
Edge Exclusion ≤ 3mm
Laser Marking C-face
Packaging Single wafer box or multi wafer box

 

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