Optical Materials
Micro-Optical Components
Fiber Optic Components
Light Sources & Photodiodes
Wafers
  Sapphire Wafer
  Patterned Sapphire Wafer
  ZnO Wafers Substrate
  AIN Wafers Substrate
  Gallium Arsenide Wafer
  Gallium Nitride Wafer
  Silicon Carbide Wafer
  Lithium Niobate Wafer
  Black Lithium Niobate Wafer
  MgO:Lithium Niobate Wafer
  Lithium Tantalate Wafer
  Black Lithium Tantalate Wafer
  Langasite Wafer
  Optical Grade Silicon Wafer
  Optical Grade Ge Wafer
  Optical substrate
  Silicon on Sapphire(SOS)
  Silicon on Insulator (SOI)
  GaN on Sapphire Substrate
  Quartz Wafer
Services
       

Silicon Carbide Semi-insulating Wafers

Product Description: 

Due to Silicon Carbide (SiC) physical and electronic properties, SiC based devices are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices, compared with Si and GaAs based devices.

SiC Epitaxy, SiC conductive substrates, SiC semi-insulating substrates: 

Features: 

  • Both 4H and 6H types are available
  • Wafer size up to 4 inches
  • Micropipe Density less than 2cm-2 is available upon request

6H SEMI-INSULATING SIC, 2″WAFER SPECIFICATION:  

Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm, (330 ± 25) μm, (430 ± 25) μm
Resistivity (RT) >1E5 Ω·cm
Surface Roughness < 0.5 nm
FWHM <50 arcsec
Micropipe Density ≤ 10 cm-2
Surface Orientation <0001>± 0.5°
Primary flat orientation {1010} ± 0.5°
Primary flat length (16 ± 1.7) mm
Secondary Flat Orientation 90° cw. from orientation flat ± 0.5°; 
Secondary flat length (8 ± 1.7) mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion   2.0 mm

 

2 Inch 6H SEMI-INSULATING SiC wafer in stock, thickness: 0.33mm, one side polished, one side etched PWSC-31B23211($1510.0): 

 
 

 
Contact us for quantity pricing.

 

4H SEMI-INSULATING SIC, 4″WAFER SPECIFICATION:  

Diameter (100 ± 0.5) mm
Thickness (350 ± 25) μm,
Resistivity (RT) >1E7 Ω·cm
Surface Roughness < 0.5 nm
Micropipe Density ≤ 50 cm-2
Surface Orientation <0001>± 0.5°
Primary flat orientation {1120} ± 0.5°
Primary flat length (32.5 ± 2.0) mm
Secondary Flat Orientation 90° cw. from orientation flat ± 0.5°; 
Secondary flat length (18 ± 2.0) mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Edge exclusion   2.0 mm

 

4 Inch 4H SEMI-INSULATING SiC wafer in stock, thickness: 0.5mm, double side polished, PWSC-43K32521($2100.0): 

 
 

 
Contact us for quantity pricing.

 

Copyright © 2016 Precision Micro-Optics Inc. All Rights Reserved.