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Gallium Arsenide Wafers

Product Description: 

GaAs material is one of the new compound semiconductor materials that are most important and most widely used after silicon single crystal. Its wide band gap gives it special properties for applications in optoelectronic, high-power and high-frequency devices.

GaAs Wafers for LD/LED Applications: 

Material Single Crystal Gallium Arsenide
Conduction Type n-type or p-type
Growth Method VGF / VB
Dopant Si for N type, Zn for P Type
Wafer Diamter 2, 3 & 4 inch or other dimensions
Crystal Orientation (100)tilt 2/6/15
OF EJ or US
Carrier Concentration (0.4~5.0)X1018 /cm3
Resistivity at RT (0.8~9)10-3 Ohm.cm
Mobility 1500~3000 cm2/v.sec
Etch Pit Density <5000 /cm2
Surface Finish P/E or P/P
Thickness 220~675um
Epitaxy Ready Yes
Package Single wafer container or cassette

 

2 Inch (100) GaAs wafers in stock, thickness: 0.35mm, VB method, N type, Si doped, one side polished, PWGA-41212001($60.0): 

 
 

 
Contact us for quantity pricing.

 

2 Inch (100) tilt 15° to (111) GaAs wafers in stock, thickness: 0.35mm, VB method, N type, Si doped, one side polished, PWGA-21112111($66.0): 

 
 

 
Contact us for quantity pricing.

 

2 Inch (100) tilt 15° to (011) GaAs wafers in stock, thickness: 0.35mm, VGF method, P type, Zn doped, one side polished, PWGA-53112031($98.0): 

 
 

 
Contact us for quantity pricing.

 

2 Inch (111) GaAs wafers in stock, thickness: 0.35mm, VB method, N type, Si doped, one side polished, PWGA-31212001($125.0): 

 
 

 
Contact us for quantity pricing.

 

4 Inch (100) GaAs wafers in stock, thickness: 0.35mm, VGF method, N type, Si doped, one side polished, PWGA-41232001($152.0): 

 
 

 
Contact us for quantity pricing.

 

4 Inch (100) tilt 15° to (111) GaAs wafers in stock, thickness: 0.35mm, VGF method, N type, Si doped, one side polished, PWGA-11132121($168.0): 

 
 

 
Contact us for quantity pricing.

 

GaAs Wafers,Semi-insulating for Microelectronics Applications: 

Conduction Type Insulating
Growth Method Vertical Gradient Freeze
Dopant Undoped
Wafer Diamter 2, 3, 4 & 6 inch or other dimensions
Crystal Orientation (111)+/- 0.50
Primary Flat (-211)
Secondary Flat (0-11)
Carrier Concentration n/a
Resistivity at RT >1E7 Ohm.cm
Mobility >5000 cm2/V.sec
Etch Pit Density <2000 /cm2
Surface Finish P/P  or P/E
Thickness 350~675um
Epitaxy Ready Yes
Package Single wafer container or cassette

 

2 Inch (111) GaAs wafers in stock, thickness: 0.4mm, VB method, semi-insulating type, one side polished, PWGA-32113231($182.0): 

 
 

 
Contact us for quantity pricing.

 

2 Inch (111) GaAs wafers in stock, thickness: 0.35mm, VB method, semi-insulating type, double side polished, PWGA-32112232($206.0): 

 
 

 
Contact us for quantity pricing.

 

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