Optical Materials
Micro-Optical Components
Fiber Optic Components
Light Sources & Photodiodes
Wafers
  Sapphire Wafer
  Patterned Sapphire Wafer
  ZnO Wafers Substrate
  AIN Wafers Substrate
  Gallium Arsenide Wafer
  Gallium Nitride Wafer
  Silicon Carbide Wafer
  Lithium Niobate Wafer
  Black Lithium Niobate Wafer
  MgO:Lithium Niobate Wafer
  Lithium Tantalate Wafer
  Black Lithium Tantalate Wafer
  Langasite Wafer
  Optical Grade Silicon Wafer
  Optical Grade Ge Wafer
  Optical substrate
  Silicon on Sapphire(SOS)
  Germanium on Silicon(GeOSi)
  Silicon on Insulator (SOI)
  GaN on Sapphire Substrate
  Quartz Wafer
Services
       

Aluminum Nitride (AIN) Substrate

Product Description: 

The aluminum nitride (AlN) ceramic has high thermal conductivity, low dielectric constant excellent mechanical properties, non-toxic, high thermal and chemical resistance. The linear expansion coefficient is similar with silicon.

Specification: 

  Material Aluminum Nitride Substrate
  Surface Roughness (μm) Ra = 0.02~0.05
  Breakdown Strength (KV/mm) 18.45
  Wrap (Length ‰) ≤ 2
  Volume Resistivity (Ω·cm) 1.4 X 1014
  Density (g/cm^3) 3.34
  Front Surface Finish Polished
  Back Surface Finish Lapped
  Thermal conductivity (W/m.K) ≥ 180
  Thermal expansion (x 10-6/°C) 2.90
  Dielectric Constant (@1MHz) 8.7
  Flexural Strength
450
  Loss Tangent (X10-4 @ 1MHz)
5

 

60X48X2mm, Aluminum Nitride substrates in stock, one side polished, PWAN-1B011 ($65.0): 

 
 

 
contact us for quantity pricing.

 

 

 

Copyright © 2016 Precision Micro-Optics Inc. All Rights Reserved.