Optical Materials
Micro-Optical Components
Fiber Optic Components
Light Sources & Photodiodes
Spectrometers
Wafers
  Sapphire Wafer
  Patterned Sapphire Wafer
  ZnO Wafers Substrate
  AIN Wafers Substrate
  Gallium Arsenide Wafer
  Gallium Nitride Wafer
  Silicon Carbide Wafer
  Lithium Niobate Wafer
  Black Lithium Niobate Wafer
  MgO:Lithium Niobate Wafer
  Lithium Tantalate Wafer
  Black Lithium Tantalate Wafer
  Si/SiO2 Wafer
  Optical Grade Silicon Wafer
  Optical Grade Ge Wafer
  Optical substrate
  Silicon on Sapphire(SOS)
  Germanium on Silicon(GeOSi)
  Silicon on Insulator (SOI)
  GaN on Sapphire Substrate
  Quartz Wafer
Services
       

Germanium on Silicon

Product Description: 

Germanium on Silicon (GeOSi) is one of the available technologies to fabricate integrated circuits or other applications. For GeOSi wafers, a thin layer of Germanium is grown on top of Si substrate.

Specification: 

Material P-type or N-type Silicon
Diameter 100.0±0.2mm (4 inches) 150.0±0.3mm (6 inches)
Orientation   [100] or others
Thickness 525 ± 25um or others
Primary Flat Length 32.5±2.5mm
47.5±2.5mm
TTV ≤15µm ≤20µm
WARP ≤30µm ≤40µm
BOW ≤20µm ≤30µm
Flatness ≤12µm ≤15µm
Front Surface Epi-Polished (Ra< 0.3nm)
Back Surface Fine ground (0.4~1.4μm) or Fine-polished Ra<1.0nm
Edge Exclusion 2~3mm
2~3mm
Ge EPI-film
Thickness 0.1~3.0μm Germanium Epitaxy Layer
Surface Quality In accordance with SEMI M4-1296
Resistivity 0.1 ~ 100 ohm·cm
Film Thickness Tolerance ±10%

 

4 Inch Un-doped Germanium on Silicon wafers in stock, Epi layer thickness: 3um, Resistivity: >30 ohm·cm, single side polished, PGOS-231211 ($1150.0): 

 
 

 
Silicon substrate thickness: 0.525mm, P type, <100>, contact us for quantity pricing.

 

4 Inch Un-doped Germanium on Silicon wafers in stock, Epi layer thickness: 1.0um, Resistivity: >30 ohm·cm, single side polished, PGOS-231111 ($1080.0): 

 
 

 
Silicon substrate thickness: 0.525mm, P type, <100>, contact us for quantity pricing.

 

Copyright © 2016 Precision Micro-Optics Inc. All Rights Reserved.